论文专著：
在国际科技期刊上发表SCI收录文章40余篇。
出版专著：
资料更新中……
发表英文论文：
1.Yuanyuan Hu, Qiong Qi, and Chao Jiang* “Influence of different dielectrics on the first layer grain sizes and its effect on the mobility of Pentacene-based thin-film transistors”, Appl. Phys. Lett., 96(2010)XXX (DOI：10.1063/1.3374887).
2.Qiong Qi, Aifang Yu, Peng Jiang and Chao Jiang* “Enhancement of carrier mobility in pentacene thin-film transistor on SiO2 by controlling the initial film growth modes”, Appl. Surf. Sci. 255(2009)5096-5099.
3.Qiong Qi, Yeping Jiang, Aifang Yu, Xiaohui Qiu and Chao Jiang* “Enhancement of Electrical Conductance for Pentacene Thin Film Transistor by Controlling an Initial Layer-by-layer Growth Mode Directly on SiO2 Insulator”, Jpn. J. Appl. Phys. 48(2009)04C164-1.
4.Aifang Yu, Qiong Qi, Peng Jiang and Chao Jiang* “The effects of hydroxyl-free polystyrene buffer layer on electrical performance of pentacene-based thin-film transistors with high-k oxide gate dielectric”, Synthetic metals 159(2009)1467-1470.
5.YU Ai-Fang, QI Qiong, JIANG Peng, JIANG Chao * “Growth Related Carrier Mobility Enhancement of Pentacene Thin-Film Transistors with High-k Oxide Gate Dielectric”, Chin. Phys. Lett. 26(2009)078501.
6.Qiong Qi, Aifang Yu, Liangmin Wang and Chao Jiang* “Behavior of Pentacene Initial Nucleation on Various Dielectrics and Its Effect on Carrier Transport in Organic Field-effect Transistor”, J. Nanosci. Nanotechnol. 10(2010)XXX.(DOI: 10.1166/jnn.2010.2802)
7.Miao Zhao, Peng Jiang*, Ke Deng, Si-Shen Xie, Guang-Lu Ge and Chao Jiang* “Modulated self-assembly of 4,4_-diphenyltetrathiafulvalene molecules on highly oriented pyrolytic graphite by n-tetradecane solvent”, Nanotechnology 20 (2009)425301.
8.Miao Zhao, Ke Deng, Peng Jiang,*, Si-Shen Xie, Denis Fichou, and Chao Jiang* “Binary-Component Self-Assembled Monolayer Comprising Tetrathiafulvalene and n-Tetradecane Molecules with Periodic Ordered Phase Separation Structures on a Highly Oriented Pyrolytic Graphite Surface”, J. Phys. Chem. C 114(2010)1646.
9. T. Muranaka, C. Jiang, A. Ito, H. Fujikura and H. Hasegawa "Origin of Non-uniformity in MBE Grown Nanometer-sized InGaAs Ridge Quantum Wires and Its Removal by Atomic Hydrogen-assisted Cleaning", Thin Solid Films 380(2000)189.
10.Chao Jiang, Takuya Kawazu, Shigeki Kobayashi and Hiroyuki Sakaki “Molecular Beam Epitaxial Growth of Very Large Lateral Anisotropic GaSb/GaAs Quantum Dots”, J. Cryst. Growth301-302(2007)828-832.
11. Chao Jiang and Hiroyuki Sakaki “Controlling Anisotropy of GaSb(As)/GaAs Quantum Dots by Self-Assembled Molecular Beam Epitaxy”, Physica E32, 17(2006).
12.Chao Jiang and Hiroyuki Sakaki “Sb/As Intermixing in Self-assembled GaSb/GaAs Type II Quantum Dot Systems and Control of Their Photoluminescence Spectra”, Physica E26, 180-184(2005).
13. S. Kobayashi, C. Jiang, T. Kawazu and H. Sakaki “Self-Assembled Growth of GaSb Type II Quantum Ring Structures”, Jpn. J. Appl. Phys. 43(2004)L662-664.
14. Chao Jiang, Tsutomu Muranaka and Hikeki Hasegawa "Molecular Beam Epitaxy Growth Mechanism and Wire Width Control for Formation of Dense Networks of Narrow InGaAs Quantum Wires", Microelectronic Engineering 63 (2002)293.
15. Chao Jiang and Hideki Hasegawa "Molecular Beam Epitaxy Growth of High-Quality Linear Arrays of InGaAs Ridge Quantum Wires with Nanometer Wire Widths and Submicron Pitches on Patterned InP Substrates" Jpn. J. Appl. Phys. 41(2002)972.
16. Chao Jiang, Tsutomu Muranaka and Hideki Hasegawa “Structural and Optical Properties of InGaAs Ridge Quantum Wires Arrays with Sub-micron Pitches Grown by Selective MBE on Patterned InP Substrates” Jpn. J. Appl. Phys. 41(2002)2683-2688.
17. A. Ito, T. Muranaka, C. Jiang, and H. Hasegawa "Formation of High-Density Hexagonal Networks of InGaAs Ridge Quantum Wires by Atomic Hydrogen-Assisted Selective Molecular Beam Epitaxy", Appl. Surf. Sci. 190(2002)231.
18. Chao Jiang, Tsutomu Muranaka and Hideki Hasegawa "Improvement of Growth Process to Achieve High Geometrical Uniformity in InGaAs Ridge Quantum Wires Grown by Selective MBE on Patterned InP Substrate", Jpn. J. Appl. Phys. 40(2001)3003-3008.
19. Tsutomu Muranaka, Chao Jiang, Akira Ito and Hikeki Hasegawa "Characterization and Optimization of Atomic Hydrogen Cleaning of InP Surface for Selective MBE Growth of InGaAs Quantum Structure Arrays", Jpn. J. Appl. Phys. 40(2001)1874.
20. Y-G. Xie, S. Kasai, H. Takahashi, C. Jiang and H. Hasegawa "A Novel InGaAs/InAlAs Insulated Gated Pseudomorphic HEMT with a Silicon Interface Control Layer Showing High DC- and RF-Performance", IEEE Electron Device Lett. 22(2001)312.
21. C. Jiang, H. Fujikura and H. Hasegawa "Vertical Barrier Layer Formation during Selective MBE Growth of InGaAs Ridge Quantum Wires on InP Patterned Substrates", Physica E7(2000)902-906
发表中文论文：
1 并五苯薄膜场效应晶体管输运性质与晶粒尺寸关联和影响 胡袁源; 祁琼; 江潮 国家纳米科学中心; 中国科学院研究生院 【会议】全国第八届有机固体电子过程暨华人有机光电功能材料学术讨论会摘要集 2010-06-14
2 高性能有机薄膜晶体管(OTFT)制备及其导电机制 江潮; 于爱芳; 祁琼 国家纳米科学中心 【期刊】微纳电子技术 2009-07-15
3 纳米技术的应用(材料、器件、产品)与标准化 任红轩; 江潮; 张宇 国家纳米科学中心; 国家纳米科学中心; 东南大学 【期刊】中国标准化 2007-09-05
4 纳米检测技术标准化简介 江潮 国家纳米科学中心 【期刊】中国标准化 2007-09-05
5 InAlAs/InGaAs/InP异质结构的X射线双晶衍射研究 麦振洪; 王超英; 吴兰生; 江潮; 周钧铭 中国科学院物理研究所; 中国科学院物理研究所; 中国科学院物理研究所 北京 【期刊】中国科学(A辑 数学 物理学 天文学 技术科学) 1994-01-15
6 InGaAs/InAlAs/InP异质结结构的X射线双晶衍射研究 王超英; 吴兰生; 江潮; 麦振洪; 黄绮; 周钧铭 中国科学院物理研究所; 中国科学院物理研究所; 中国科学院物理研究所 北京 【期刊】科学通报 1992-12-11
7 8—12μm GaAs量子阱红外探测器及其线阵列 陈正豪; 周均铭; 崔大复; 胡强; 蔡丽红;江潮; 吕惠宾; 黄绮; 杨国桢; 尹洁; 吴人齐; 周文娟; 徐元林; 郑炳洪 中国科学院物理研究所; 中国科学院物理研究所; 华北光电技术研究所; 华北光电技术研究所 北京 【期刊】科学通报 1993-06-30
8 与In扩散进GaAs中相关的超导相的发现 李永康; 周均铭; 黄绮; 江潮; 梅笑冰; 范戆 中国科学院物理研究所; 中国科学院物理研究所 【期刊】物理 1992-09-27
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